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Diodes Incorporated
DMN4036LK3
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source voltage
(Note 2)
V GS
± 20
V
(Note 4)
12.2
Continuous Drain current
V GS = 10V
T A = 70 ° C (Note 4)
I D
9.7
A
(Note 3)
8.5
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
31.7
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
10.4
31.7
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 3)
Symbol
Value
4.12
33
Unit
Power dissipation
Linear derating factor
(Note 4)
P D
8.49
67.9
W
mW/ ° C
(Note 6)
(Note 3)
2.12
16.9
30.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 4)
(Note 6)
(Note 7)
R θ JA
R θ JL
T J , T STG
14.7
59.0
3.1
-55 to 150
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t ≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
2 of 8
www.diodes.com
March 2010
? Diodes Incorporated
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